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Partname:HMC455LP3
Description:InGaP HBT 1/2 Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz
Manufacturer:Hittite Microwave Corporation
Datasheet:PDF (313K).
Click here to download *)

The HMC455LP3 is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 makes the HMC455LP3 an ideal driver amplifier for PCS/3G wireless infrastructure. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.

Click here to download HMC455LP3 Datasheet
Click here to download HMC455LP3 Datasheet
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