The HMC452QS16G is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.45 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 15.5 dB from 0.8 to 1.0 GHz and 10 dB from 1.8 to 2.0 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +48 dBm at 0.9 GHz and 1.9 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE makes the HMC452QS16G an ideal power amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.