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Partname: | HMC415LP3 |
Description: | GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz |
Manufacturer: | Hittite Microwave Corporation |
Datasheet: | PDF (309K). Click here to download *) |
The HMC415LP3 is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3.0V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. |
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Click here to download HMC415LP3 Datasheet*) |
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