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Partname: | HMC413QS16G |
Description: | GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz |
Manufacturer: | Hittite Microwave Corporation |
Datasheet: | PDF (318K). Click here to download *) |
The HMC413QS16G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5.0V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. |
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Click here to download HMC413QS16G Datasheet*) |
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