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Partname:HMC408LP3
Description:GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
Manufacturer:Hittite Microwave Corporation
Datasheet:PDF (264K).
Click here to download *)

The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5.0V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.

Click here to download HMC408LP3 Datasheet
Click here to download HMC408LP3 Datasheet
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