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Partname: | 407MS8GE |
Description: | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz |
Manufacturer: | Hittite Microwave Corporation |
Datasheet: | PDF (309K). Click here to download *) |
The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. |
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Click here to download 407MS8GE Datasheet*) |
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