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Partname:GS840E32AB-100I
Description:100MHz 12ns 256K x 18 4Mb sync burst SRAM
Manufacturer:
Package:BGA
Pins:119
Oper. temp.:-40 to 85
Datasheet:PDF (911K).
Click here to download *)

The GS840E18/32/36A is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36A is available in a JEDEC standard 100-lead TQFP or 119-Bump BGA package.

Click here to download GS840E32AB-100I Datasheet
Click here to download GS840E32AB-100I Datasheet
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