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Partname: | GS8160E18T-200I |
Description: | 6.5ns 200MHz 1M x 18 synchronous burst SRAM |
Manufacturer: | |
Package: | TQFP |
Pins: | 100 |
Oper. temp.: | 0 to 70 |
Datasheet: | PDF (784K). Click here to download *) |
The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edgetriggered Data Output Register. |
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Click here to download GS8160E18T-200I Datasheet*) |
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