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| Partname: | GLT40516-10E |
| Description: | 32k x 16 embedded EDO DRAM |
| Manufacturer: | |
| Package: | -- |
| Oper. temp.: | 0 to 70 |
| Datasheet: | PDF (249K).
Click here to download *) |
The 512Kbit Embedded DRAM (EmDRAM) is an asynchronous design with non-multiplexed row and column addressing scheme. The memory operations are controlled by RAS, CASH/CASL, and WE. Byte access is controlled by CASH (upper byte) and CASL (lower byte). The EmDRAM has been designed to support 200Mbyte data rate with a 30 ns latency when operated in the page mode with extended data output (EDO). this maximum rate can be sustained for one page of 12 bytes. |
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Click here to download GLT40516-10E Datasheet*) |
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