IRF610 Datasheet - N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. from

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Partname:	IRF610
Description:	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A.
Manufacturer:
Package:	TO-220AB
Pins:	3
Oper. temp.:	-55 to 150
Datasheet:	PDF (164K). Click here to download ^*)

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