BD801 Datasheet - Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W. from

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Partname:	BD801
Description:	Epitaxial-base, silicon N-P-N VERSAWATT transistor. 100V, 65W.
Manufacturer:
Package:	TO-220AB
Pins:	3
Oper. temp.:	-55 to 150
Datasheet:	PDF (138K). Click here to download ^*)

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