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Partname:MRFE6VP5600HSR6
Description: RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
Manufacturer:Freescale Semiconductor
Datasheet:PDF (935K).
Click here to download *)

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Volts, IDQ = 100 mA Pout

Click here to download MRFE6VP5600HSR6 Datasheet
Click here to download MRFE6VP5600HSR6 Datasheet
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