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Partname: | MBM29PDS322TE |
Description: | 32M (2M x 16) BIT Page Dual Operation |
Manufacturer: | Fujitsu Microelectronics |
Datasheet: | PDF (694K). Click here to download *) |
The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu's standard 1.8 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. |
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Click here to download MBM29PDS322TE Datasheet*) |
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