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Partname: | MBM29DL640E80TR |
Description: | Flash memory CMOS 64M (8M x 8/4M x 16) bit |
Manufacturer: | Fujitsu Microelectronics |
Package: | plastic TSOP |
Pins: | 48 |
Oper. temp.: | -20 to 70 |
Datasheet: | PDF (913K). Click here to download *) |
The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to be programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The device is organized into four physical banks: Bank A, Bank B, Bank C and Bank D, which can be considered to be four separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu's standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. (Continued) |
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