|
|
|
|
| Partname: | LPS200 |
| Description: | High performance low noise PHEMT |
| Manufacturer: | |
| Package: | - |
| Datasheet: | PDF (29.7).
Click here to download *) |
The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPS200 also features Si3 N4 passivation and is available in various packages. |
|
Click here to download LPS200 Datasheet*) |
 |
| *)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership. |
|
|
|
