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Partname: | LPD200P70 |
Description: | Packaged high dynamic range PHEMT |
Manufacturer: | |
Package: | - |
Datasheet: | PDF (61.0). Click here to download *) |
The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200's active areas are passivated with Si3 N4 , and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems and other types of commercial wireless systems. |
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![Click here to download LPD200P70 Datasheet](../../../pndecoder/datasheets/FILTR/img/000024.gif) Click here to download LPD200P70 Datasheet*) |
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