The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612's active areas are passivated with Si3 N4 , and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include high dynamic range receiver preamplifiers for commercial applications including Cellular/PCS systems, WLAN and WLL systems, and other types of high-gain applications for radio link systems.