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| Partname: | LP7612 |
| Description: | High dynamic range PHEMT |
| Manufacturer: | |
| Package: | - |
| Datasheet: | PDF (39.3).
Click here to download *) |
The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP7612 also features Si3 N4 passivation and is available in a P70 ceramic package. |
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Click here to download LP7612 Datasheet*) |
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