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Partname: | LP750P100 |
Description: | Packaged 0.5 W power PHEMT |
Manufacturer: | |
Package: | - |
Datasheet: | PDF (49.2). Click here to download *) |
The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also features Si3 N4 passivation and is available in die form or in surface-mount packages. The LP750P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems. |
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Click here to download LP750P100 Datasheet*) |
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