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| Partname: | LP6836 |
| Description: | Medium power PHEMT |
| Manufacturer: | |
| Package: | - |
| Datasheet: | PDF (35.5).
Click here to download *) |
The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP6836 also features Si3 N4 passivation and is available in P70 and SOT343 package types. |
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Click here to download LP6836 Datasheet*) |
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