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Partname: | LP3000SOT89-3 |
Description: | LOW NOISE, HIGH LINEARITY PACKAGED PHEMT |
Manufacturer: | |
Datasheet: | PDF (44.1K). Click here to download *) |
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages. Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers. |
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Click here to download LP3000SOT89-3 Datasheet*) |
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