The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power applications, or in the SOT-89 plastic package. Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade.