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Partname: | LP1500SOT2231 |
Description: | Low Noise, High Linearity Packaged PHEMT |
Manufacturer: | |
Datasheet: | PDF (69.8K). Click here to download *) |
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power applications, or in the SOT-89 plastic package. Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is patterned after MIL-STD-19500, JANC grade. |
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Click here to download LP1500SOT2231 Datasheet*) |
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