ChipDocs - Datasheet Source for Semiconductor and Electronic Circuit Components
More than
12 925 291 
queries processed
Partname:LP1500
Description:1 W power PHEMT
Manufacturer:
Package:-
Datasheet:PDF (40.3).
Click here to download *)

The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3 N4 passivation and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package. Typical applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.

Click here to download LP1500 Datasheet
Click here to download LP1500 Datasheet
*)
*)Datasheets downloading from ChipDocs is only for our members (paid service). REGISTER NOW for your membership.
Free Electronics Engineering Subscription
Win Win Circuit - PCB,PCBA,Touch Screen,LED Lighting
Win Win Circuit LTD. PCB, PCBA, LCD Module
www.wwteq.com
COPYRIGHT 1997-2024 ChipDocs  ALL RIGHT RESERVED