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Partname: | LP1500 |
Description: | 1 W power PHEMT |
Manufacturer: | |
Package: | - |
Datasheet: | PDF (40.3). Click here to download *) |
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 1500 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3 N4 passivation and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package. Typical applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. |
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Click here to download LP1500 Datasheet*) |
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