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Partname: | FPD750SOT89 |
Description: | LOW NOISE, HIGH LINEARITY PACKAGED PHEMT |
Manufacturer: | |
Datasheet: | PDF (386K). Click here to download *) |
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD750 is available in die form and in other packages. |
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Click here to download FPD750SOT89 Datasheet*) |
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