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Partname: | FPD750DFN |
Description: | LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT |
Manufacturer: | |
Datasheet: | PDF (204K). Click here to download *) |
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD750DFN is available in die form and in other packages. |
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Click here to download FPD750DFN Datasheet*) |
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