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Partname: | FPD2250SOT89E |
Description: | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
Manufacturer: | |
Datasheet: | PDF (380K). Click here to download *) |
The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 2250 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. |
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Click here to download FPD2250SOT89E Datasheet*) |
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