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Partname: | FPD1500SOT89CE |
Description: | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
Manufacturer: | |
Datasheet: | PDF (708K). Click here to download *) |
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. |
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![Click here to download FPD1500SOT89CE Datasheet](../../../pndecoder/datasheets/FILTR/img/000103.gif) Click here to download FPD1500SOT89CE Datasheet*) |
![](http://www.chipdocs.com/common/img/1x10t.gif) |
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