The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 m x 750 m Schottky barrier gate, defined by electron-beam photolithography. The FP750's active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package. The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for PCS and GSM base station front-ends.