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| Partname: | FP100 |
| Description: | High performance PHEMT |
| Manufacturer: | |
| Package: | - |
| Datasheet: | PDF (32.6).
Click here to download *) |
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation. Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications. |
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Click here to download FP100 Datasheet*) |
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