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Partname:EB750SOT343-BG
Description: LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Manufacturer:
Datasheet:PDF (600K).
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The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate. The Filtronic 0.25m process ensures class-leading noise performance.

Click here to download EB750SOT343-BG Datasheet
Click here to download EB750SOT343-BG Datasheet
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