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| Partname: | EB750SOT343-BA |
| Description: | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
| Manufacturer: | |
| Datasheet: | PDF (600K).
Click here to download *) |
The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate. The Filtronic 0.25m process ensures class-leading noise performance. |
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Click here to download EB750SOT343-BA Datasheet*) |
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