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Partname: | EB750DFN-BC |
Description: | LOW NOISE HIGH LINEARITY PACKAGED PHEMT |
Manufacturer: | |
Datasheet: | PDF (419K). Click here to download *) |
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. |
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Click here to download EB750DFN-BC Datasheet*) |
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