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| Partname: | EB200P70-AJ |
| Description: | HIGH FREQUENCY PACKAGED PHEMT |
| Manufacturer: | |
| Datasheet: | PDF (421K).
Click here to download *) |
The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 200 mm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. |
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Click here to download EB200P70-AJ Datasheet*) |
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