The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 18501910 and 1920 1980 MHz bands. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild's InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.