The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded efficiency and excellent linearity are achieved using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.