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Partname: | NDH853N |
Description: | Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Manufacturer: | Fairchild Semiconductor |
Package: | SuperSOT-8 |
Datasheet: | PDF (82.6K). Click here to download *) |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed. |
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Click here to download NDH853N Datasheet*) |
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