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Partname:NDB6060L
Description:Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V
Manufacturer:Fairchild Semiconductor
Package:TO-263
Datasheet:PDF (361K).
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These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Click here to download NDB6060L Datasheet
Click here to download NDB6060L Datasheet
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