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Partname:NDB6030L
Description:Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V
Manufacturer:Fairchild Semiconductor
Package:TO-263
Datasheet:PDF (56.1K).
Click here to download *)

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Click here to download NDB6030L Datasheet
Click here to download NDB6030L Datasheet
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