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| Partname: | HGT1S10N120BNST |
| Description: | 1200V, NPT Series N-Channel IGBT |
| Manufacturer: | Fairchild Semiconductor |
| Package: | TO-263(D2PAK) |
| Pins: | 2 |
| Datasheet: | PDF (217K).
Click here to download *) |
The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. |
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Click here to download HGT1S10N120BNST Datasheet*) |
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