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    | Partname: | FDG6303 |  
    | Description: | Dual N-Channel, Digital FET |     
    | Manufacturer: | Fairchild Semiconductor |  
    | Datasheet: | PDF (226K). Click here to download *) |  
    These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.  |  
    
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    Click here to download FDG6303 Datasheet*) | 
  
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