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Partname: | FDG6301N |
Description: | Dual N-Channel Digital FET [Preliminary] |
Manufacturer: | Fairchild Semiconductor |
Datasheet: | PDF (226K). Click here to download *) |
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. |
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Click here to download FDG6301N Datasheet*) |
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