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Partname: | EM658160TS-3.3 |
Description: | 300MHz 4M x 16 DDR synchronous DRAM (SDRAM) |
Manufacturer: | |
Package: | TSOP |
Pins: | 66 |
Oper. temp.: | 0 to 70 |
Datasheet: | PDF (158K). Click here to download *) |
The EM658160 SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 64 Mbits. It is internally configured as a quad 1M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and /CK. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM658160 provides programmable Read or Write burst lengths of 2, 4, 8, full page. |
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![Click here to download EM658160TS-3.3 Datasheet](../../../pndecoder/datasheets/ETRON/img/000009.gif) Click here to download EM658160TS-3.3 Datasheet*) |
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