The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 8,388,608 bytes or 4,194,304 words. Any word can be programmed typically in 8s. The EN29LV640T/B features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV640T/B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full Chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.