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Partname:GP201MHS18
Description:1800V low voltage half bridge IGBT module
Manufacturer:
Package:--
Pins:11
Datasheet:PDF (129K).
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The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

Click here to download GP201MHS18 Datasheet
Click here to download GP201MHS18 Datasheet
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