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Partname:DS2016-150
Description:2k x 8 3V/5V Operation Static RAM
Manufacturer:Dallas Semiconductor
Datasheet:PDF (254K).
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The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100 ns when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density.

Click here to download DS2016-150 Datasheet
Click here to download DS2016-150 Datasheet
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