The CYK512K16SCCA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery LifeTM (MoBL) in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH, CE2 LOW), OE is deasserted HIGH, or during a write operation (Chip Enabled and Write Enable WE LOW). Reading from the device is accomplished by asserting the Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O8 to I/O15. See the Truth Table for a complete description of read and write modes. |