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Partname:CY7C1541V18-333BZXC
Description:72-Mbit QDR???-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
Manufacturer:Cypress Semiconductor
Datasheet:PDF (665K).
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The CY7C1541V18, CY7C1556V18, CY7C1543V18, and CY7C1545V18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture. Similar to QDR-II architecture, QDR-II+ SRAMs consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to "turn-around" the data bus that exists with common IO devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1541V18), 9-bit words (CY7C1556V18), 18-bit words (CY7C1543V18), or 36-bit words (CY7C1545V18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simplifying system design by eliminating bus "turn-arounds". Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Click here to download CY7C1541V18-333BZXC Datasheet
Click here to download CY7C1541V18-333BZXC Datasheet
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