The CY7C1323BV25 is a 2.5V Synchronous Pipelined SRAM equipped with DDR-I (Double Data Rate) architecture. The DDR-I architecture consists of an SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. Addresses for Read and Write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Every read or write operation is associated with four words that burst sequentially into or out of the device. The burst counter takes in the least two significant bits of the external address and bursts four 36-bit words. Depth expansion is accomplished with Port Selects for each port. Port selects allow each port to operate independently. Asynchronous inputs include impedance match (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. Output data clocks(C/C) are also provided for maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.