The CY7C1317CV18, CY7C1917CV18, CY7C1319CV18, and CY7C1321CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a two-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with four 8-bit words in the case of CY7C1317CV18 and four 9-bit words in the case of CY7C1917CV18 that burst sequentially into or out of the device. The burst counter always starts with a `00' internally in the case of CY7C1317CV18 and CY7C1917CV18. For CY7C1319CV18 and CY7C1321CV18, the burst counter takes in the least two significant bits of the external address and bursts four 18-bit words in the case of CY7C1319CV18, and four 36-bit words in the case of CY7C1321CV18, sequentially into or out of the device.